PTFA241301E Datasheet Thermally-Enhanced High Power RF LDMOS FET

Manufacturer: Infineon

Datasheet Details

Part number	PTFA241301E
Manufacturer	Infineon
File Size	237.18 KB
Description	Thermally-Enhanced High Power RF LDMOS FET
Download	PTFA241301E Download (PDF)

The PTFA241301E and PTFA241301F are thermally-enhanced 130-watt, internally matched GOLDMOS ® FETs intended for ultralinear applications.

They are characterized for CDMA, CDMA2000, Super3G (3GPP TSG RAN), and WiMAX operation from 2420 to 2480 MHz.

Full gold metallization ensures excellent device lifetime and reliability.

PTFA241301E PTFA241301F Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2420 – 2480.

Thermally-enhanced packaging, Pb-free and RoHS-compliant.
Broadband internal matching.
Typical CDMA2000 performance at 2450 MHz - Average output power = 25 W - Linear Gain = 14 dB - Efficiency = 25%.
Typical CW performance, 2420 MHz, 28 V - Output power at P.
1dB = 140 W - Efficiency = 50%.
Integrated ESD protection: Human Body Model, Class 2 (minimum).
Excellent thermal stability, low HCI drift.
Capable of handling 10:1 VSWR.

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