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PTFA241301F - Thermally-Enhanced High Power RF LDMOS FET

This page provides the datasheet information for the PTFA241301F, a member of the PTFA241301E Thermally-Enhanced High Power RF LDMOS FET family.

Datasheet Summary

Description

The PTFA241301E and PTFA241301F are thermally-enhanced 130-watt, internally matched GOLDMOS ® FETs intended for ultralinear applications.

They are characterized for CDMA, CDMA2000, Super3G (3GPP TSG RAN), and WiMAX operation from 2420 to 2480 MHz.

Features

  • Thermally-enhanced packaging, Pb-free and RoHS-compliant.
  • Broadband internal matching.
  • Typical CDMA2000 performance at 2450 MHz - Average output power = 25 W - Linear Gain = 14 dB - Efficiency = 25%.
  • Typical CW performance, 2420 MHz, 28 V - Output power at P.
  • 1dB = 140 W - Efficiency = 50%.
  • Integrated ESD protection: Human Body Model, Class 2 (minimum).
  • Excellent thermal stability, low HCI drift.
  • Capable of handling 10:1 VSWR.

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Datasheet preview – PTFA241301F

Datasheet Details

Part number PTFA241301F
Manufacturer Infineon
File Size 237.18 KB
Description Thermally-Enhanced High Power RF LDMOS FET
Datasheet download datasheet PTFA241301F Datasheet
Additional preview pages of the PTFA241301F datasheet.

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Full PDF Text Transcription

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PTFA241301E PTFA241301F Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2420 – 2480 MHz Description The PTFA241301E and PTFA241301F are thermally-enhanced 130-watt, internally matched GOLDMOS ® FETs intended for ultralinear applications. They are characterized for CDMA, CDMA2000, Super3G (3GPP TSG RAN), and WiMAX operation from 2420 to 2480 MHz. Full gold metallization ensures excellent device lifetime and reliability. PTFA241301E Package H-30260-2 PTFA241301F Package H-31260-2 Drain Efficiency (%) Adj. Ch. Power Ratio (dBc) Three-carrier CDMA2000 Performance VDD = 28 V, IDQ = 1150 mA, ƒ = 2450 MHz 45 40 ACP Up -40 -45 35 ACP Low 30 -50 -55 25 -60 20 -65 Efficiency 15 ALT Up -70 10 -75 5 -80 36 38 40 42 44 46 48 Output Power, Avg.
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