Datasheet4U Logo Datasheet4U.com
Infineon logo

PTFA241301F

Manufacturer: Infineon

This datasheet includes multiple variants, all published together in a single manufacturer document.

PTFA241301F datasheet preview

Datasheet Details

Part number PTFA241301F
Datasheet PTFA241301F PTFA241301E Datasheet (PDF)
File Size 237.18 KB
Manufacturer Infineon
Description Thermally-Enhanced High Power RF LDMOS FET
PTFA241301F page 2 PTFA241301F page 3

PTFA241301F Overview

The PTFA241301E and PTFA241301F are thermally-enhanced 130-watt, internally matched GOLDMOS ® FETs intended for ultralinear applications. They are characterized for CDMA, CDMA2000, Super3G (3GPP TSG RAN), and WiMAX operation from 2420 to 2480 MHz. Full gold metallization ensures excellent device lifetime and reliability.

PTFA241301F Key Features

  • Thermally-enhanced packaging, Pb-free and RoHS-pliant
  • Broadband internal matching
  • Typical CDMA2000 performance at 2450 MHz
  • Average output power = 25 W
  • Linear Gain = 14 dB
  • Efficiency = 25%
  • Typical CW performance, 2420 MHz, 28 V
  • Output power at P-1dB = 140 W
  • Efficiency = 50%
  • Integrated ESD protection: Human Body Model, Class 2 (minimum)
Infineon logo - Manufacturer

More Datasheets from Infineon

See all Infineon datasheets

Part Number Description
PTFA241301E Thermally-Enhanced High Power RF LDMOS FET
PTFA240451E Thermally-Enhanced High Power RF LDMOS FET
PTFA210301E Thermally-Enhanced High Power RF LDMOS FET
PTFA210601E Thermally-Enhanced High Power RF LDMOS FET
PTFA210601F Thermally-Enhanced High Power RF LDMOS FET
PTFA210701E Thermally-Enhanced High Power RF LDMOS FET
PTFA210701F Thermally-Enhanced High Power RF LDMOS FET
PTFA211001E Thermally-Enhanced High Power RF LDMOS FET
PTFA211801E Thermally-Enhanced High Power RF LDMOS FET
PTFA211801F Thermally-Enhanced High Power RF LDMOS FET

PTFA241301F Distributor

Datasheet4U Logo
Since 2006. D4U Semicon. About Datasheet4U Contact Us Privacy Policy Purchase of parts