Description
The PTVA123501EC and PTVA123501FC LDMOS FETs are designed for use in power amplifier applications in the 1200 MHz to 1400 MHz frequency band.
Features
- include high gain and thermally-enhanced package with slotted and earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTVA123501EC Package H-36248-2
PTVA123501FC Package H-37248-2
Power Sweep, Pulsed RF IDQ = 150 mA, VDD = 50 V, TCASE = 25°C,
300 µs pulse width, 12% duty cycle
POUT (dBm) Drain Efficiency (%)
60 80
55
Output Power
50
70 60
45 50
40
35
30 30
Efficiency
32 34 36
1200 MHz
40
1.
PTVA123501EC Datasheet
