PTVA123501FC - Thermally-Enhanced High Power RF LDMOS FETs

This page provides the datasheet information for the PTVA123501FC, a member of the PTVA123501EC Thermally-Enhanced High Power RF LDMOS FETs family.

Product Overview

Infineon

Part number	PTVA123501FC
Manufacturer	Infineon
File Size	611.19 KB
Description	Thermally-Enhanced High Power RF LDMOS FETs
Datasheet	PTVA123501FC Datasheet
Additional preview pages of the PTVA123501FC datasheet.

The PTVA123501EC and PTVA123501FC LDMOS FETs are designed for use in power amplifier applications in the 1200 MHz to 1400 MHz frequency band.

include high gain and thermally-enhanced package with slotted and earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTVA123501EC Package H-36248-2 PTVA123501FC Package H-37248-2 Power Sweep, Pulsed RF IDQ = 150 mA, VDD = 50 V, TCASE = 25°C, 300 µs pulse width, 12% duty cycle POUT (dBm) Drain Efficiency (%) 60 80 55 Output Power 50 70 60 45 50 40 35 30 30 Efficiency 32 34 36 1200 MHz 40 1.

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Published: Feb 3, 2016 |