PXAC203302FV Datasheet (Infineon)

Part PXAC203302FV
Description Thermally-Enhanced High Power RF LDMOS FET
Manufacturer Infineon
Size 341.44 KB
Pricing from 151.4658418 USD, available from Microchip USA and Component Stockers USA.
Infineon

PXAC203302FV Overview

Key Specifications

Max Frequency: 2.025 GHz
Max Operating Temp: 225 °C

Description

The PXAC203302FV is a 330-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 1880 to 2025 MHz frequency band. Features include dual-path design, input matching, high gain and thermally-enhanced package with earless flanges.

Key Features

  • Broadband internal input and output matching
  • Asymmetrical Doherty design
  • Main : P1dB = 130 W Typ
  • Peak : P1dB = 2

Price & Availability

Seller Inventory Price Breaks Buy
Microchip USA 374 20+ : 151.4658418 USD
100+ : 149.4190061 USD
1000+ : 147.3721704 USD
10000+ : 145.3253347 USD
View Offer
Component Stockers USA 5103 1000+ : 37.42 USD View Offer