The PXAC203302FV is a Thermally-Enhanced High Power RF LDMOS FET.
| Max Frequency | 2.025 GHz |
|---|---|
| Max Operating Temp | 225 °C |
Infineon
The PXAC203302FV is a 330-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 1880 to 2025 MHz frequency band. Features include d.
include dual-path design, input matching, high gain and thermally-enhanced package with earless flanges. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PXAC203302FV Package H-37275-4 Peak/Average Ratio, Gain (dB) Ef.
Wolfspeed
The PXAC203302FV is a 330-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 1880 to 2025 MHz frequency band. Features include d.
include dual-path design, input matching, high gain and thermally-enhanced package with earless flanges. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WC.
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