PXFC191507FC
PXFC191507FC is Thermally-Enhanced High Power RF LDMOS FET manufactured by Infineon.
Description
The PXFC191507FC is a 150-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1990 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package with earless flanges. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.
Gain (d B) Efficiency (%)
Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 960 m A, VGS = 2.65 V, ƒ = 1990 MHz, 3GPP WCDMA signal,
PAR = 8 d B, 10 MHz carrier spacing, 22 BW 3.84 MHz
21 Gain
60 50
20 40
19 30
18 20
Efficiency
17 10
16 29
33 37 41 45 Output Power (d Bm) c191507fc_g1
49 53
PXFC191507FC Package H-37248G-4/2
Features
- Broadband internal input and output matching
- Typical Pulsed CW performance, 1990 MHz, 28 V,
10 µs pulse width, 10% duty cycle, class AB test
- Output...
