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PXFC191507FC - 150W High Power RF LDMOS FET

General Description

The PXFC191507FC is a 150-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1990 MHz frequency band.

Key Features

  • include input and output matching, high gain and thermally-enhanced package with earless flanges. Manufactured with an advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PXFC191507FC Package H-37248G-4/2 Gain (dB) Efficiency (%) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 960 mA, VGS = 2.65 V, ƒ = 1990 MHz, 3GPP WCDMA signal, PAR = 8 dB, 10 MHz carrier spacing, 22 BW 3.84 MHz 60 21 Gain 50 20 40 19 30 18 20 Efficiency 17 10.

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Full PDF Text Transcription for PXFC191507FC (Reference)

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PXFC191507FC Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 1805 – 1990 MHz Description The PXFC191507FC is a 150-watt LDMOS FET intended for use in multi-standa...

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PXFC191507FC is a 150-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1990 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package with earless flanges. Manufactured with an advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PXFC191507FC Package H-37248G-4/2 Gain (dB) Efficiency (%) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 960 mA, VGS = 2.65 V, ƒ = 1990 MHz, 3GPP WCDMA signal, PAR = 8 dB, 10 MHz carrier spacing, 22 BW 3.

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Infineon Logo PXFC191507FC Thermally-Enhanced High Power RF LDMOS FET Infineon

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