Infineon Technologies PZTA13
NPN Silicon Darlington Transistors
| Part No. | PZTA13 |
|---|---|
| Datasheet | PZTA13 Download |
| Manufacturer |  Infineon Technologies |
| Description | NPN Silicon Darlington Transistors |
| Buy | Stock & Price |
MAXIMUM RATINGS
Parameter Marking PZTA 13 PZTA 14 1=B 1=B Pin Configuration 2=C 2=C 3=E 3=E 4=C 4=C Package SOT223 SOT223 Symbol VCES VCBO VEBO Values 30 30 10 Unit V Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Peak collector current Base current Peak base current Total power dissipation, TS = 124 °C Junction temperature Storage temperature IC ICM IB IBM Ptot Tj Tstg 300 500 100 200 1.5 150 -65 ... 150 mA mA W °C Thermal Resistance Junction - soldering point 1) RthJS 17 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Nov-30-2001 PZTA13, PZTA14ELECTRICAL CHARACTERISTICS
at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 100 µA, VBE = 0 Collector-base breakdown voltage IC = 100 µA, IE = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 30 V, IE = 0 Collector cutoff current VCB = 30 V, IE = 0 ,...
