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SIDC14D120H8 - Fast switching diode

Datasheet Summary

Description

AQL 0,65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to MIL-STD 883 Revision History Version Subjects (major changes since last revision) 2.0 Final data sheet 2.1 Operating junction temperature 2.2 Editorial changes Date 26.10.2012

Features

  • Recommended for: A.
  • 1200V technology 120 µm chip.
  • power modules and discrete.
  • soft, fast switching devices.
  • low reverse recovery charge.
  • small temperature coefficient C.
  • qualified according to JEDEC for target.

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Datasheet Details

Part number SIDC14D120H8
Manufacturer Infineon
File Size 180.71 KB
Description Fast switching diode
Datasheet download datasheet SIDC14D120H8 Datasheet
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Full PDF Text Transcription

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SIDC14D120H8 Fast switching diode chip in Emitter Controlled Technology Features: Recommended for: A  1200V technology 120 µm chip  power modules and discrete  soft, fast switching devices  low reverse recovery charge  small temperature coefficient C  qualified according to JEDEC for target Applications: applications  SMPS, resonant applications, drives Chip Type SIDC14D120H8 VR IFn 1200V 25A Die Size 3.8 x 3.8 mm2 Package sawn on foil Mechanical Parameters Die size Area total Anode pad size Thickness Wafer size Max. possible chips per wafer Passivation frontside Pad metal Backside metal 3.8 x 3.8 14.44 mm2 3.08 x 3.
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