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SIDC10D120H8
Fast switching diode chip in Emitter Controlled Technology
Features:
1200V Emitter Controlled technology 120 µm chip
Soft, fast switching Low reverse recovery charge Small temperature coefficient Qualified according to JEDEC for target
applications
Recommended for:
Power modules and discrete devices
Applications:
SMPS, resonant applications, drives
Chip Type
VR
IFn
SIDC10D120H8 1200V 15A
Die Size 3.2 x 3.2 mm2
Package sawn on foil
Mechanical Parameters
Die size Area total
3.2 x 3.2 10.24
mm2
Anode pad size
2.48 x 2.48
Thickness
120
µm
Wafer size
200
mm
Max.
SIDC10D120H8 Datasheet
