SIDC10D120H8
SIDC10D120H8 is Fast switching diode manufactured by Infineon.
Fast switching diode chip in Emitter Controlled Technology
Features
:
- 1200V Emitter Controlled technology 120 µm chip
- Soft, fast switching
- Low reverse recovery charge
- Small temperature coefficient
- Qualified according to JEDEC for target applications
Remended for:
- Power modules and discrete devices
Applications:
- SMPS, resonant applications, drives
Chip Type
IFn
SIDC10D120H8 1200V 15A
Die Size 3.2 x 3.2 mm2
Package sawn on foil
Mechanical Parameters
Die size Area total
3.2 x 3.2 10.24 mm2
Anode pad size
2.48 x 2.48
Thickness
µm
Wafer size
200 mm
Max. possible chips per wafer
Passivation frontside
Photoimide
Pad metal Backside...
