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SIDC130D170H
Fast switching diode
A
Features:
Recommended for:
1700V technology, Emitter Controlled
power modules
Diode 3th generation, 200 µm chip
soft, fast switching
C
low reverse recovery charge
Applications:
small temperature coefficient
resonant applications, drives
Qualified according to JEDEC for target
applications
Chip Type
VR
IFn1 )
Die Size
Package
SIDC130D170H 1700V 235A
16.3 x 8 mm2
sawn on foil
1 ) nominal forward current at Tc = 100°C, not subject to production test - verified by design/characterisation
Mechanical Parameters Die size Area total Anode pad size Thickness Wafer size Max. possible chips per wafer Passivation frontside Pad metal
Backside metal
16.3 x 8 130.4
14.28 x 5.
SIDC130D170H Datasheet
