SIDC112D170H Datasheet | Infineon

Fast switching diode Features : - 1700V technology, Emitter Controlled Diode 3th generation, 200 µm chip - soft, fast switching - low reverse recovery charge - small temperature coefficient This chip is used for: - power modules Applications: - resonant applications, drives Chip Type 1700V 205A Die Size 11.8 x 9.52 mm2 Package sawn on foil Mechanical Parameters Raster size Area total Anode pad size Thickness Wafer size Max. possible chips per wafer Passivation frontside Pad metal Backside metal Die bond Wire bond Reject ink dot size Remended storage environment 11.8 x 9.52 112.3 mm2 9.78 x 7.5 µm 150 mm Photoimide 3200 nm...