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Fast switching diode
Features: • 1700V technology, Emitter Controlled
Diode 3th generation, 200 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient
SIDC112D170H
A
This chip is used for: • power modules
C
Applications: • resonant applications, drives
Chip Type
SIDC112D170H
VR
IF
1700V 205A
Die Size 11.8 x 9.52 mm2
Package sawn on foil
Mechanical Parameters Raster size Area total Anode pad size Thickness Wafer size Max. possible chips per wafer Passivation frontside Pad metal
Backside metal
Die bond Wire bond Reject ink dot size
Recommended storage environment
11.8 x 9.52 112.3
mm2
9.78 x 7.
SIDC112D170H Datasheet
