SIDC23D120F6 Datasheet | Infineon

Fast switching diode chip in Emitter Controlled Technology Features : Remended for: - 1200V technology 120 µm chip - power modules and discrete - soft, fast switching devices - low reverse recovery charge - small temperature coefficient - qualified according to JEDEC for target Applications: applications - SMPS, resonant applications, drives Chip Type SIDC23D120F6 IFn 1200V 25A Die Size 3.5 x 6.5 mm2 Package sawn on foil Mechanical Parameters Die size Area total Anode pad size Thickness Wafer size Max. possible chips per wafer Passivation frontside Pad metal Backside metal 3.5 x 6.5 22.75 2.78 x 5.78 120 150 644 Photoimide 3200 nm AlSiCu Ni Ag -...