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SIDC23D120F6
Fast switching diode chip in Emitter Controlled Technology
Features:
Recommended for:
A
1200V technology 120 µm chip
power modules and discrete
soft, fast switching
devices
low reverse recovery charge
C
small temperature coefficient
qualified according to JEDEC for target
Applications:
applications
SMPS, resonant applications,
drives
Chip Type SIDC23D120F6
VR
IFn
1200V 25A
Die Size 3.5 x 6.5 mm2
Package sawn on foil
Mechanical Parameters Die size Area total Anode pad size Thickness Wafer size Max. possible chips per wafer Passivation frontside Pad metal Backside metal
3.5 x 6.5 22.75
2.78 x 5.
SIDC23D120F6 Datasheet
