SIDC30D120H8 Datasheet | Infineon

Fast switching diode chip in Emitter Controlled Technology Features : - 1200V Emitter Controlled technology 120 µm chip - Soft, fast switching - Low reverse recovery charge - Small temperature coefficient - Qualified according to JEDEC for target applications Remended for: - Power modules and discrete devices Applications: - SMPS, resonant applications, drives Chip Type IFn SIDC30D120H8 1200V 50A Die Size 5.5 x 5.5 mm2 Package sawn on foil Mechanical Parameters Die size Area total 5.5 x 5.5 30.25 mm2 Anode pad size 4.78 x 4.78 Thickness µm Wafer size 200 mm Max. possible chips per wafer Passivation frontside Photoimide Pad...