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SIDC81D120H8
Fast switching diode chip in Emitter Controlled Technology
Features:
1200V Emitter Controlled technology 120 µm chip
Soft, fast switching Low reverse recovery charge Small temperature coefficient Qualified according to JEDEC for target
applications
Recommended for:
Power modules and discrete devices
Applications:
SMPS, resonant applications, drives
Chip Type
VR
IFn
SIDC81D120H8 1200V 150A
Die Size 9 x 9 mm2
Package sawn on foil
Mechanical Parameters
Die size Area total Anode pad size Thickness Wafer size Max. possible chips per wafer Passivation frontside Pad metal
Backside metal
Die bond
Wire bond
Reject ink dot size
Storage environment
for original and sealed MBB bags
for open MBB bags
9x9 81
mm2
8.046 x 8.
SIDC81D120H8 Datasheet
