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SIGC101T170R3 Datasheet PDF

Infineon Technologies SIGC101T170R3

IGBT

Part No. SIGC101T170R3
Datasheet SIGC101T170R3 Download
Manufacturer
Infineon Technologies
Description IGBT
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SIGC101T170R3 datasheet page 1 preview

FEATURES

:
● 1700V Trench + Field Stop technology
● low turn-off losses
● short tail current
● positive temperature coefficient
● easy paralleling 3 This chip is used for:
● power module C

APPLICATIONS

:
● drives G E Chip Type SIGC101T170R3 VCE 1700V ICn 75A Die Size 10.03 x 10.03 mm2 Package sawn on foil Ordering Code Q67050A4188-A001 MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area total / active Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Emitter metalization Collector metalization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment 10.03 x 10.03 8 x ( 3.82 x 1.75 ) 1.18 x 1.09 100.6 / 75.3 190 150 90 136 pcs Photoimide 3200 nm AlSiCu 1400 nm Ni Ag –system suitable for epoxy and soft solder die bonding electrically conductive glue or solder Al, <500µm ∅ 0.65mm ; max 1.2mm store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23°C mm µm mm grd 2 mm Edited by INFINEON Technol...
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