Click to expand full text
IGBT3 Power Chip
FEATURES: 600V Trench & Field Stop technology low turn-off losses short tail current positive temperature coefficient easy paralleling
SIGC41T120R3E
This chip is used for: power module
Applications: drives
C G
E
Chip Type
VCE
IC
SIGC41T120R3E 1200V 35A
Die Size 6.5 x 6.37 mm2
Package sawn on foil
Mechanical Parameters Raster size Emitter pad size (incl. gate pad) Gate pad size Area total Thickness Wafer size Max.possible chips per wafer Passivation frontside Pad metal
Backside metal
Die bond Wire bond Reject ink dot size
Recommended storage environment
6.5 x 6.37
4.992 x 4.898 1.139 x 1.139
mm2
41.
SIGC41T120R3E Datasheet
