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SIGC41T120R3
IGBT Chip
FEATURES: • 1200V Trench + Field Stop technology • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling
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This chip is used for: • power module
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Applications: • drives
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E
Chip Type SIGC41T120R3
VCE 1200V
ICn 35A
Die Size 6.5 x 6.37 mm2
Package sawn on foil
Ordering Code Q67050A4105-A001
MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area total / active Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Emitter metallization Collector metallization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment 6.5 x 6.37 4.992 x 4.898 1.139 x 1.139 41.4 / 30.
SIGC41T120R3 Datasheet
