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SIGC42T170R3GE
IGBT3 Power Chip
Features: 1700V Trench + Field Stop technology low turn-off losses short tail current positive temperature coefficient easy paralleling
This chip is used for: power module
Applications: drives
C G
E
Chip Type
VCE
ICn
SIGC42T170R3GE 1700V 29A
Die Size 6.5 x 6.46 mm2
Package sawn on foil
MECHANICAL PARAMETER Raster size Emitter pad size (incl. gate pad) Gate pad size Area total / active Thickness Wafer size Max.possible chips per wafer Passivation frontside Pad metal
Backside metal
Die bond Wire bond Reject ink dot size
Recommended storage environment
6.5 x 6.46
4.27 x 4.27 1.18 x 1.09
mm2
42 / 28.
SIGC42T170R3GE Datasheet
