SKW30N60 Datasheet PDF

MAXIMUM RATINGS

Parameter Collector-emitter voltage DC collector current TC = 25C TC = 100C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE  600V, Tj  150C Diode forward current TC = 25C TC = 100C Diode pulsed current, tp limited by Tjmax Gate-emitter voltage Short circuit withstand time2 VGE = 15V, VCC  600V, Tj  150C Power dissipation TC = 25C Soldering temperature wavesoldering, 1.6 mm (0.063 in.) from case for 10s Operating junction and storage temperature Symbol VCE IC ICpuls - IF IFpuls VGE tSC Ptot Ts Tj , Tstg 1 J-STD-020 and JESD-022 2 Allowed number of short circuits: <1000; time between short circuits: >1s. 1 Value 600 41 30 112 112 Unit V A 41 30 112 20 10 250 260 -55...+150 V s W °C C Rev. 2_3 12.06.2013 SKW30N60 Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction – case Diode thermal resistance, junction – case Thermal resistance, junction – ambient Symbol RthJC RthJCD RthJA Conditions Max. Value 0.5 1...