SKW30N60
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode
- 75% lower Eoff pared to previous generation bined with low conduction losses
- Short circuit withstand time
- 10 s
- Designed for:
- Motor controls
- Inverter
- NPT-Technology for 600V applications offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
- Very soft, fast recovery anti-parallel Emitter Controlled Diode
- Pb-free lead plating; Ro HS pliant
- Qualified according to JEDEC1 for target applications
- plete product spectrum and PSpice Models : http://.infineon./igbt/
PG-TO-247-3
Type SKW30N60
VCE IC VCE(sat) Tj Marking Package
600V 30A
2.5V
150C K30N60 PG-TO-247-3
Maximum Ratings
Parameter
Collector-emitter voltage DC collector current TC = 25C TC = 100C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE 600V, Tj 150C Diode forward current TC = 25C TC =...
