SPB04N60S5 Overview
SPP04N60S5 SPB04N60S5 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance P-TO220-3-1 VDS RDS(on) ID P-TO263-3-2 600 0.95 4.5 V Ω A P-TO220-3-1 Continuous drain current A Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse I D = 3.4 A, VDD = 50 V I D puls EAS 9 130 0.4 4.5 ±20
