Datasheet4U Logo Datasheet4U.com

SPB04N60S5 - Cool MOS Power Transistor

Datasheet Summary

Description

and charts stated herein.

Infineon Technologies is an approved CECC manufacturer.

📥 Download Datasheet

Datasheet preview – SPB04N60S5

Datasheet Details

Part number SPB04N60S5
Manufacturer Infineon
File Size 323.85 KB
Description Cool MOS Power Transistor
Datasheet download datasheet SPB04N60S5 Datasheet
Additional preview pages of the SPB04N60S5 datasheet.

📁 Similar Datasheet

  • SPB04N60S5 - N-Channel MOSFET (INCHANGE)
  • SPB04N60C2 - Cool MOS Power Transistor (Infineon Technologies)
  • SPB04N60C3 - Cool MOS Power Transistor (Infineon Technologies)
  • SPB04N60C3 - N-Channel MOSFET (INCHANGE)
  • SPB04N50C3 - N-Channel MOSFET (INCHANGE)
  • SPB04N50C3 - Power Transistor (Infineon Technologies)
  • SPB02N60C3 - Cool MOS Power Transistor (Infineon Technologies)
  • SPB02N60C3 - N-Channel MOSFET (INCHANGE)
  • SPB02N60S5 - Cool MOS Power Transistor (Infineon Technologies)
  • SPB02N60S5 - N-Channel MOSFET (INCHANGE)
Other Datasheets by Infineon

Full PDF Text Transcription

Click to expand full text
SPP04N60S5 SPB04N60S5 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance P-TO220-3-1 VDS RDS(on) ID P-TO263-3-2 600 0.95 4.5 V Ω A P-TO220-3-1 2 1 23 Type Package Ordering Code SPP04N60S5 SPB04N60S5 P-TO220-3-1 P-TO263-3-2 Q67040-S4200 Q67040-S4201 Marking 04N60S5 04N60S5 Maximum Ratings Parameter Continuous drain current TC = 25 °C TC = 100 °C Symbol ID Value 4.5 2.8 Unit A Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse I D = 3.4 A, VDD = 50 V I D puls EAS 9 130 0.4 4.5 ±20 ±30 mJ Avalanche energy, repetitive tAR limited by Tjmax1) EAR I D = 4.
Published: |