SPB04N60S5 Datasheet and Specifications PDF

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* New revolutionary high voltage technology
* Ultra low gate charge
* Periodic avalanche rated
* Extreme dv/dt rated
* Ultra low effective capacitances
* Improved transconductance P-TO220-3-1 VDS RDS(on) ID P-TO263-3-2 600 0.95 4.5 V Ω A P-TO220-3-1 2 1 23 Type Package Ordering Code SPP04N.

Isc N-Channel MOSFET Transistor SPB04N60S5 ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variatio.

*With To-263(D2PAK) package
*Low input capacitance and gate charge
*Low gate input resistance
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
*APPLICATIONS
*Switching applications
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE .