Infineon Technologies SPB08P06P
Power-Transistor
| Part No. | SPB08P06P |
|---|---|
| Datasheet | SPB08P06P Download |
| Manufacturer |  Infineon Technologies |
| Description | Power-Transistor |
| Buy | Stock & Price |
FEATURES
● P-Channel● Enhancement mode
● Avalanche rated
● dv /dt rated
● 175°C operating temperature
● Pb-free lead finishing; RoHS compliant ° Halogen-free according to IEC61249-2-21 ° Qualified according to AEC Q101 Product Summary V DS R DS(on),max ID SPB08P06P G -60 V 0.3 Ω -8.8 A PG-TO263-3 Type Package SPB08P06PG PG-TO263-3 Tape and reel information 1000 pcs / reel Marking Lead free 08P06P Yes Packing Non dry Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current Pulsed drain current ID I D,pulse T A=25 °C T A=100 °C T A=25 °C Value Unit steady state -8.8 A -6.3 -35.32 Avalanche energy, single pulse E AS I D=8.83 A, R GS=25 Ω 70 mJ Reverse diode dv /dt Gate source voltage Power dissipation Operating and storage temperature dv /dt I D=8.83 A, V DS=48 V, di /dt =-200 A/µs, T j,max=175 °C V GS P tot T A=25 °C T j, T stg ESD class Soldering temperature IEC climatic category; DIN IEC 68-1 -6 ±20 42 "-55 ... +175" kV/µs V W °C 2...
