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SPB08P06P Datasheet P-Channel MOSFET

Manufacturer: Inchange Semiconductor

Overview: isc P-Channel MOSFET Transistor ·.

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Key Features

  • Static drain-source on-resistance: RDS(on)≤300mΩ(@VGS= -10V; ID= -6.2A).
  • Advanced trench process technology.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
Infineon Technologies Logo SPB08P06P Power-Transistor Infineon Technologies
Infineon Technologies Logo SPB08P06PG Power-Transistor Infineon Technologies

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