SPB08P06P
SPB08P06P is Power-Transistor manufactured by Infineon.
Features
- P-Channel
- Enhancement mode
- Avalanche rated
- dv /dt rated
- 175°C operating temperature
- Pb-free lead finishing; Ro HS pliant ° Halogen-free according to IEC61249-2-21 ° Qualified according to AEC Q101
Product Summary V DS R DS(on),max ID
SPB08P06P G
-60 V 0.3 Ω -8.8 A
PG-TO263-3
Type
Package
SPB08P06PG PG-TO263-3
Tape and reel information 1000 pcs / reel
Marking Lead free 08P06P Yes
Packing Non dry
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current Pulsed drain current
ID I D,pulse
T A=25 °C T A=100 °C T A=25 °C
Value
Unit steady state
-8.8
-6.3
-35.32
Avalanche energy, single pulse
E AS
I D=8.83 A, R GS=25 Ω
70 m J
Reverse diode dv /dt
Gate source voltage Power dissipation Operating and storage temperature dv /dt
I D=8.83 A, V DS=48 V, di /dt =-200 A/µs, T j,max=175 °C
V GS
P tot
T A=25 °C
T j, T...
