SPB08P06P Datasheet
SPB08P06P Datasheet (Inchange Semiconductor)
Inchange Semiconductor
isc P-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤300mΩ(@VGS= -10V; ID= -6.2A) ·Advanced trench process technology ·100% avalanche tested ·Minimum Lot-to-Lot varia.
*Static drain-source on-resistance:
RDS(on)≤300mΩ(@VGS= -10V; ID= -6.2A)
*Advanced trench process technology
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
*APPLICATIONS
*Fast switching application.
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBO.
SPB08P06P Datasheet (Infineon)
Infineon
SIPMOS® Power-Transistor Features • P-Channel • Enhancement mode • Avalanche rated • dv /dt rated • 175°C operating temperature • Pb-free lead finishing; RoHS compliant ° Halogen-free according to IEC.
* P-Channel
* Enhancement mode
* Avalanche rated
* dv /dt rated
* 175°C operating temperature
* Pb-free lead finishing; RoHS compliant ° Halogen-free according to IEC61249-2-21 ° Qualified according to AEC Q101
Product Summary V DS R DS(on),max ID
SPB08P06P G
-60 V 0.3 Ω -8.8 A
PG-TO263-3
Type
.