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SPB08P06PG - Power-Transistor

Datasheet Summary

Features

  • P-Channel.
  • Enhancement mode.
  • Avalanche rated.
  • dv /dt rated.
  • 175°C operating temperature.
  • Pb-free lead finishing; RoHS compliant ° Halogen-free according to IEC61249-2-21 ° Qualified according to AEC Q101 Product Summary V DS R DS(on),max ID SPB08P06P G -60 V 0.3 Ω -8.8 A PG-TO263-3 Type Package SPB08P06PG PG-TO263-3 Tape and reel information 1000 pcs / reel Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol.

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Datasheet Details

Part number SPB08P06PG
Manufacturer Infineon Technologies
File Size 266.62 KB
Description Power-Transistor
Datasheet download datasheet SPB08P06PG Datasheet
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Full PDF Text Transcription

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SIPMOS® Power-Transistor Features • P-Channel • Enhancement mode • Avalanche rated • dv /dt rated • 175°C operating temperature • Pb-free lead finishing; RoHS compliant ° Halogen-free according to IEC61249-2-21 ° Qualified according to AEC Q101 Product Summary V DS R DS(on),max ID SPB08P06P G -60 V 0.3 Ω -8.8 A PG-TO263-3 Type Package SPB08P06PG PG-TO263-3 Tape and reel information 1000 pcs / reel Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current Pulsed drain current ID I D,pulse T A=25 °C T A=100 °C T A=25 °C Marking Lead free 08P06P Yes Packing Non dry Value steady state -8.8 -6.3 -35.32 Unit A Avalanche energy, single pulse E AS I D=8.
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