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SPB08P06PG

Manufacturer: Infineon

SPB08P06PG datasheet by Infineon.

SPB08P06PG datasheet preview

SPB08P06PG Datasheet Details

Part number	SPB08P06PG
Datasheet	SPB08P06PG-InfineonTechnologies.pdf
File Size	266.62 KB
Manufacturer	Infineon
Description	Power-Transistor

SPB08P06PG Overview

SIPMOS®.

SPB08P06PG Key Features

P-Channel
Enhancement mode
Avalanche rated
dv /dt rated
175°C operating temperature
Pb-free lead finishing; RoHS pliant ° Halogen-free according to IEC61249-2-21 ° Qualified according to AEC Q101
60 V 0.3 Ω -8.8 A
8.8 -6.3 -35.32
case Thermal resistance, junction
ambient, leaded

SPB08P06P from other manufacturers

View SPB08P06P datasheet index

Brand Logo	Part Number	Description	Other Manufacturers
	SPB08P06P	P-Channel MOSFET	INCHANGE

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