SPB17N80C2
SPB17N80C2 is Power Transistor manufactured by Infineon.
Feature
Power Semiconductors
- New revolutionary high voltage technology
Product Summary
- Worldwide best RDS(on) in TO 220
- Ultra low gate charge
VDS 800 V
WRDS(on) 290 m
- Periodic avalanche rated
- Extreme dv/dt rated m- Ultra low effective capacitances o- Improved noise immunity
P-TO263-3-2
17 A
P-TO220-3-1 t4U.c Type
SPP17N80C2 e SPB17N80C2
Package P-TO220-3-1 P-TO263-3-2
Ordering Code Q67040-S4353 Q67040-S4354
Marking SPP17N80C2 SPB17N80C2 he Maximum Ratings, at Tj = 25 °C, unless otherwise specified
SParameter
Symbol ta Continuous drain current a TC = 25 °C
TC = 100 °C
.DPulsed drain current, tp limited by Tjmax w Avalanche energy, single pulse
ID=4A, VDD=50V
ID puls EAS ww Avalanche energy, repetitive t AR limited by Tjmax1)
Value
17 11 51 670
Unit A m J
ID=17A, VDD=50V
Avalanche current, repetitive t AR limited by Tjmax
17...
