SPB17N80C2 Overview
.. Preliminary data SPP17N80C2 SPB17N80C2 Cool MOS™ Power Transistor COOLMOS Feature Power Semiconductors · New revolutionary high voltage technology Product Summary · Worldwide best RDS(on) in TO 220 · Ultra low gate charge VDS 800 V WRDS(on) 290 m · Periodic avalanche rated · Extreme dv/dt rated m· Ultra low effective capacitances o· Improved noise immunity ID P-TO220-3-1 t4U.cType TC = 100 °C ID .DPulsed drain current, tp limited by Tjmax wAvalanche energy, single pulse ID=4A, VDD=50V ID puls EAS wwAvalanche energy, repetitive tAR limited by Tjmax1) EAR Value mJ ID=17A, VDD=50V Avalanche current, repetitive tAR limited by Tjmax IAR 17 A Revers