SPB17N80C3 Overview
CoolMOS® Power Transistor Features • new revolutionary high voltage technology • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS pliant • Ultra low gate charge • Ultra low effective capacitances Product Summary V DS R DS(on)max @ Tj = 25°C Q g,typ SPB17N80C3 I D,pulse E AS E AR I AR dv /dt V GS T C=25 °C T C=100 °C T C=25 °C I D=3.4 A, V DD=50 V I D=17 A, V DD=50 V -55 ... 150 Unit A Thermal characteristics
SPB17N80C3 Key Features
- new revolutionary high voltage technology
- Extreme dv/dt rated
- High peak current capability
- Qualified according to JEDEC1) for target
