Infineon Technologies SPB18P06P
SIPMOS Power-Transistor
| Part No. | SPB18P06P |
|---|---|
| Datasheet | SPB18P06P Download |
| Manufacturer |  Infineon Technologies |
| Description | SIPMOS Power-Transistor |
| Buy | Stock & Price |
FEATURES
● P-Channel● Enhancement mode
● Avalanche rated
● dv /dt rated
● 175°C operating temperature
● Pb-free lead plating; RoHS compliant ° Halogen-free according to IEC61249-2-21 ° Qualified according to AEC Q101 Product Summary V DS R DS(on),max ID SPB18P06P G -60 V 0.13 Ω -18.6 A PG-TO263-3 Type Package SPB18P06PG PG-TO263-3 Tape and reel information 1000 pcs / reel Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current Pulsed drain current ID I D,pulse T A=25 °C T A=100 °C T A=25 °C Marking Lead free 18P06P Yes Packing Non dry Value Unit steady state -18.7 A -13.2 -74.8 Avalanche energy, single pulse E AS I D=18.7 A, R GS=25 Ω 151 mJ Avalanche energy, periodic limited by Tjmax E AR Reverse diode dv /dt dv /dt I D=18.7 A, V DS=48 V, di /dt =-200 A/µs, T j,max=175 °C Gate source voltage V GS Power dissipation P tot T A=25 °C Operating and storage temperature T j, T stg ESD class Soldering temperature IEC climatic category; D...
