Infineon Technologies SPB80P06P
Power Transistor
| Part No. | SPB80P06P |
|---|---|
| Datasheet | SPB80P06P Download |
| Manufacturer |  Infineon Technologies |
| Description | Power Transistor |
| Buy | Stock & Price |
FEATURES
Product Summary● P-Channel
● Enhancement mode
● Avalanche rated
● dv/dt rated Drain source voltage VDS -60 V W Drain-source on-state resistance RDS(on) 0.023 Continuous drain current ID -80 A
● 175°C operating temperature ° Pb-free lead plating: RoHS compliant ° Halogen-free according to IEC61249-2-21 ° Qualified according to AEC Q101 Type SPB80P06P G Package Lead free PG-TO263-3 Yes Pin 1 PIN 2/4 PIN 3 G D S
MAXIMUM RATINGS
,at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current ID TC = 25 °C, 1) TC = 100 °C Pulsed drain current TC = 25 °C ID puls Avalanche energy, single pulse W ID = -80 A , VDD = -25 V, RGS = 25 Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt EAS EAR dv/dt IS = -80 A, VDS = -48 , di/dt = 200 A/µs, Tjmax = 175 °C Gate source voltage Power dissipation TC = 25 °C Operating and storage temperature IEC climatic category; DIN IEC 68-1 VGS Ptot Tj , Tstg Value -80 -64 -320 823 34 6 ±20 340 -55...+175 55/175/56 1Current...
