SPB80P06P Overview
isc P-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤23mΩ(@VGS= -10V; ID= -64A) ·Advanced trench process technology ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Fast switching application. ·
SPB80P06P Key Features
- Static drain-source on-resistance

