SPB80P06P
SPB80P06P is Power Transistor manufactured by Infineon.
SPB80P06P G
SIPMOS® Power-Transistor
Features
Product Summary
- P-Channel
- Enhancement mode
- Avalanche rated
- dv/dt rated
Drain source voltage
-60 V
W Drain-source on-state resistance RDS(on) 0.023
Continuous drain current
-80 A
- 175°C operating temperature
° Pb-free lead plating: RoHS pliant
° Halogen-free according to IEC61249-2-21
° Qualified according to AEC Q101
Type SPB80P06P G
Package Lead free PG-TO263-3 Yes
Pin 1 PIN 2/4 PIN 3
Maximum Ratings,at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
TC = 25 °C, 1)
TC = 100 °C
Pulsed drain current TC = 25 °C
ID puls
Avalanche energy, single pulse
W ID =...
