Datasheet4U Logo Datasheet4U.com

SPB80P06P - Power Transistor

Key Features

  • Product Summary.
  • P-Channel.
  • Enhancement mode.
  • Avalanche rated.
  • dv/dt rated Drain source voltage VDS -60 V W Drain-source on-state resistance RDS(on) 0.023 Continuous drain current ID -80 A.
  • 175°C operating temperature ° Pb-free lead plating: RoHS compliant ° Halogen-free according to IEC61249-2-21 ° Qualified according to AEC Q101 Type SPB80P06P G Package Lead free PG-TO263-3 Yes Pin 1 PIN 2/4 PIN 3 G D S Maximum Ratings,at Tj = 25 °C, unless otherwis.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
SPB80P06P P-Channel MOSFET INCHANGE
SPB80P06PG Power Transistor Infineon
SPB80N03 SIPMOS Power Transistor Siemens Semiconductor Group
SPB80N03L Power Transistor Siemens
SPB-002 10 AMP 20 VOLTS BYPASS DIODE ASSEMBLY SSDI

Other Datasheets by Infineon

Part Number Description
SPB80N03S2-03 OptiMOS Power-Transistor
SPB80N03S2-03 OptiMOS Power-Transistor
SPB80N03S2L-03 OptiMOS Power-Transistor
SPB80N03S2L-03 OptiMOS Power-Transistor
SPB80N03S2L-04 OptiMOS Power-Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SPB80P06P G SIPMOS® Power-Transistor Features Product Summary · P-Channel · Enhancement mode · Avalanche rated · dv/dt rated Drain source voltage VDS -60 V W Drain-source on-state resistance RDS(on) 0.