SPB80P06P Overview
W ID = -80 A , VDD = -25 V, RGS = 25 Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt EAS EAR dv/dt IS = -80 A, VDS = -48 , di/dt = 200 A/µs, Tjmax = 175 °C Gate source voltage Power dissipation TC = 25 °C Operating and storage temperature IEC climatic category; DIN IEC 68-1 VGS Ptot
SPB80P06P Key Features
- P-Channel
- Enhancement mode
- Avalanche rated
- dv/dt rated
- 175°C operating temperature
- 80 -64 -320
- 55...+175 55/175/56
- case Thermal resistance, junction
- ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 1)
- 0.1 -1
