SPB80P06PG - Power Transistor

This page provides the datasheet information for the SPB80P06PG, a member of the SPB80P06P Power Transistor family.

Datasheet Summary

Features

Product Summary.
P-Channel.
Enhancement mode.
Avalanche rated.
dv/dt rated Drain source voltage VDS -60 V W Drain-source on-state resistance RDS(on) 0.023 Continuous drain current ID -80 A.
175°C operating temperature ° Pb-free lead plating: RoHS compliant ° Halogen-free according to IEC61249-2-21 ° Qualified according to AEC Q101 Type SPB80P06P G Package Lead free PG-TO263-3 Yes Pin 1 PIN 2/4 PIN 3 G D S Maximum Ratings,at Tj = 25 °C, unless otherwis.

Infineon

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Datasheet Details

Part number	SPB80P06PG
Manufacturer	Infineon
File Size	607.93 KB
Description	Power Transistor
Datasheet	SPB80P06PG Datasheet
Additional preview pages of the SPB80P06PG datasheet.

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Full PDF Text Transcription

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SPB80P06P G SIPMOS® Power-Transistor Features Product Summary · P-Channel · Enhancement mode · Avalanche rated · dv/dt rated Drain source voltage VDS -60 V W Drain-source on-state resistance RDS(on) 0.

Published: Dec 3, 2020 |