SPB80P06PG Description
SPB80P06P G SIPMOS® Power-Transistor.
SPB80P06PG Key Features
- P-Channel
- Enhancement mode
- Avalanche rated
- dv/dt rated
- 175°C operating temperature
- 80 -64 -320
- 55...+175 55/175/56
- case Thermal resistance, junction
- ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 1)
- 0.1 -1