SPB80P06P Datasheet and Specifications PDF

SPB80P06P G SIPMOS® Power-Transistor Features Product Summary · P-Channel · Enhancement mode · Avalanche rated · dv/dt rated Drain source voltage VDS -60 V W Drain-source on-state resistance R.

Product Summary
* P-Channel
* Enhancement mode
* Avalanche rated
* dv/dt rated Drain source voltage VDS -60 V W Drain-source on-state resistance RDS(on) 0.023 Continuous drain current ID -80 A
* 175°C operating temperature ° Pb-free lead plating: RoHS compliant ° Halogen-free according t.

isc P-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤23mΩ(@VGS= -10V; ID= -64A) ·Advanced trench process technology ·100% avalanche tested ·Minimum Lot-to-Lot variati.

*Static drain-source on-resistance: RDS(on)≤23mΩ(@VGS= -10V; ID= -64A)
*Advanced trench process technology
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
*APPLICATIONS
*Fast switching application.
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL .