Infineon Technologies SPD07N60C3
Power Transistor
| Part No. | SPD07N60C3 |
|---|---|
| Datasheet | SPD07N60C3 Download |
| Manufacturer |  Infineon Technologies |
| Description | Power Transistor |
| Buy | Stock & Price |
MAXIMUM RATINGS
Parameter Symbol Continuous drain current ID TC = 25 °C TC = 100 °C Pulsed drain current, tp limited by Tjmax ID puls Avalanche energy, single pulse EAS ID = 5.5 A, VDD = 50 V Avalanche energy, repetitive tAR limited by Tjmax1) EAR ID = 7.3 A, VDD = 50 V Avalanche current, repetitive tAR limited by Tjmax IAR Reverse diode dv/dt dv/dt IS=7.3A, VDS=480V, Tj=125°C Gate source voltage static Gate source voltage AC (f >1Hz) Power dissipation, TC = 25°C Operating and storage temperature VGS VGS Ptot Tj , Tstg Page 1 Value Unit A 7.3 4.6 21.9 230 mJ 0.5 7.3 A 6 V/ns ±20 V ±30 83 W -55... +150 °C 2003-09-16 Final data SPD07N60C3 SPU07N60C3MAXIMUM RATINGS
Parameter Drain Source voltage slope VDS = 480 V, ID = 7.3 A, Tj = 125 °C Thermal Characteristics Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 2) Soldering temperature, 1.6 mm (0.063 in.) from case for 10s 3) Symbo...
