VBsemi Electronics SPD07N60C3
N-Channel 650V Power MOSFET
| Part No. | SPD07N60C3 |
|---|---|
| Datasheet | SPD07N60C3 Download |
| Manufacturer | VBsemi Electronics |
| Description | N-Channel 650V Power MOSFET |
| Buy | Stock & Price |
FEATURES
● Low figure-of-merit (FOM) Ron x Qg● Low input capacitance (Ciss)
● Reduced switching and conduction losses
● Ultra low gate charge (Qg)
● Avalanche energy rated (UIS)
APPLICATIONS
● Server and telecom power supplies● Switch mode power supplies (SMPS)
● Power factor correction power supplies (PFC)
● Lighting - High-intensity discharge (HID) - Fluorescent ballast lighting
● Industrial GDS Top View G S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
(TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current a Linear Derating Factor VDS VGS VGS at 10 V TC = 25 °C TC = 100 °C ID IDM Single Pulse Avalanche Energy b Maximum Power Dissipation Operating Junction and Storage Temperature Range Drain-Source Voltage Slope Reverse Diode dV/dt d TJ = 125 °C EAS PD TJ, Tstg dV/dt Soldering Recommendations (Peak Temperature) c for 10 s Notes a. Repetitive rating; pulse width limited by maximum junction temperature. b.
