• Part: SPD08P06PG
  • Description: Power-Transistor
  • Category: Transistor
  • Manufacturer: Infineon
  • Size: 598.69 KB
Download SPD08P06PG Datasheet PDF
Infineon
SPD08P06PG
Features - P-Channel - Enhancement mode - Avalanche rated - dv /dt rated - 175°C operating temperature - Pb-free lead finishing; Ro HS pliant ° Qualified according to AEC Q101 SPD08P06P G Product Summary V DS R DS(on),max ID -60 V 0.3 Ω -8.8 A PG-TO252-3 Type Package SPD08P06PG PG-TO252-3 Tape and reel information 1000 pcs / reel Marking Lead free 08P06P Yes Packing Non dry Parameter Symbol Conditions Continuous drain current Pulsed drain current ID I D,pulse T A=25 °C T A=100 °C T A=25 °C Avalanche energy, single pulse E AS I D=8.83 A, R GS=25 Ω Avalanche energy, periodic limited by Tjmax E AR Reverse diode dv /dt dv /dt I D=8.83 A, V DS=48 V, di /dt =-200 A/µs, T j,max=175 °C Gate source voltage Power dissipation Operating and storage temperature ESD class V GS P tot T A=25 °C T j, T stg Soldering temperature IEC climatic category; DIN IEC 68-1 Value steady state -8.83 -6.25 -35.32 -6 ±20 42 "-55...