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SPD08P06PG - Power-Transistor

Key Features

  • P-Channel.
  • Enhancement mode.
  • Avalanche rated.
  • dv /dt rated.
  • 175°C operating temperature.
  • Pb-free lead finishing; RoHS compliant ° Qualified according to AEC Q101 SPD08P06P G Product Summary V DS R DS(on),max ID -60 V 0.3 Ω -8.8 A PG-TO252-3 Type Package SPD08P06PG PG-TO252-3 Tape and reel information 1000 pcs / reel Marking Lead free 08P06P Yes Packing Non dry Parameter Symbol Conditions Continuous drain current Pulsed drain cur.

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SIPMOS® Power-Transistor Features • P-Channel • Enhancement mode • Avalanche rated • dv /dt rated • 175°C operating temperature • Pb-free lead finishing; RoHS compliant ° Qualified according to AEC Q101 SPD08P06P G Product Summary V DS R DS(on),max ID -60 V 0.3 Ω -8.8 A PG-TO252-3 Type Package SPD08P06PG PG-TO252-3 Tape and reel information 1000 pcs / reel Marking Lead free 08P06P Yes Packing Non dry Parameter Symbol Conditions Continuous drain current Pulsed drain current ID I D,pulse T A=25 °C T A=100 °C T A=25 °C Avalanche energy, single pulse E AS I D=8.83 A, R GS=25 Ω Avalanche energy, periodic limited by Tjmax E AR Reverse diode dv /dt dv /dt I D=8.