Infineon Technologies SPI07N60S5
Cool MOS Power Transistor
| Part No. | SPI07N60S5 |
|---|---|
| Datasheet | SPI07N60S5 Download |
| Manufacturer |  Infineon Technologies |
| Description | Cool MOS Power Transistor |
| Buy | Stock & Price |
MAXIMUM RATINGS
Parameter Symbol Continuous drain current TC = 25 °C TC = 100 °C ID Pulsed drain current, tp limited by Tjmax ID puls Avalanche energy, single pulse EAS ID = - A, VDD = 50 V Avalanche energy, repetitive tAR limited by Tjmax1) EAR ID = 7.3 A, VDD = 50 V Avalanche current, repetitive tAR limited by Tjmax IAR Gate source voltage Gate source voltage AC (f >1Hz) VGS VGS Power dissipation, TC = 25°C Operating and storage temperature Ptot Tj , Tstg Value 7.3 4.6 14.6 230 0.5 7.3
