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SPI07N60S5

Manufacturer: Inchange Semiconductor

SPI07N60S5 datasheet by Inchange Semiconductor.

SPI07N60S5 datasheet preview

SPI07N60S5 Datasheet Details

Part number SPI07N60S5
Datasheet SPI07N60S5-INCHANGE.pdf
File Size 266.93 KB
Manufacturer Inchange Semiconductor
Description N-Channel MOSFET
SPI07N60S5 page 2

SPI07N60S5 Overview

·Ultra low gate charge ·High peak current capability ·Improved transconductance · RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 7.3 IDM Drain Current-Single Pulsed 14.6 PD Total Dissipation @TC=25℃ 83 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER...

SPI07N60S5 Key Features

  • Static drain-source on-resistance
  • DESCRIPTION -Ultra low gate charge -High peak current capability -Improved transconductance

SPI07N60S5 from other manufacturers

View SPI07N60S5 datasheet index

Brand Logo Part Number Description Other Manufacturers
Infineon Technologies Logo SPI07N60S5 Cool MOS Power Transistor Infineon Technologies
Inchange Semiconductor logo - Manufacturer

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