Download SPI07N60C3 Datasheet PDF
SPI07N60C3 page 2
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SPI07N60C3 Description

·Ultra low gate charge ·High peak current capability ·Improved transconductance · RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 7.3 IDM Drain Current-Single Pulsed 21.9 PD Total Dissipation @TC=25℃ 83 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER...

SPI07N60C3 Key Features

  • Static drain-source on-resistance
  • DESCRIPTION -Ultra low gate charge -High peak current capability -Improved transconductance