SPI07N60C3 Datasheet and Specifications PDF

SPP07N60C3 SPI07N60C3, SPA07N60C3 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS @ Tjmax 650 V RDS(on) 0.6 Ω ID 7.3 A • Periodic aval.

* New revolutionary high voltage technology
* Ultra low gate charge VDS @ Tjmax 650 V RDS(on) 0.6 Ω ID 7.3 A
* Periodic avalanche rated PG-TO220FP PG-TO262 PG-TO220
* Extreme dv/dt rated 2
* High peak current capability
* Improved transconductance 1 23 P-TO220-3-31 P-TO220-3-1 23 1
* .

·Ultra low gate charge ·High peak current capability ·Improved transconductance ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage .

*Static drain-source on-resistance: RDS(on) ≤0.6Ω
*Enhancement mode
*Fast Switching Speed
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
*DESCRIPTION
*Ultra low gate charge
*High peak current capability
*Improved transconductance
*ABSOLUT.