SPI07N60S5 Datasheet and Specifications PDF

Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low e.

* New revolutionary high voltage technology
* Worldwide best RDS(on) in TO 220
* Ultra low gate charge
* Periodic avalanche rated
* Extreme dv/dt rated
* Ultra low effective capacitances
* Improved transconductance SPP07N60S5 SPI07N60S5 VDS RDS(on) ID 600 V 0.6 Ω 7.3 A PG-TO262 PG-TO220 2 P-TO2.

·Ultra low gate charge ·High peak current capability ·Improved transconductance ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage .

*Static drain-source on-resistance: RDS(on) ≤0.6Ω
*Enhancement mode
*Fast Switching Speed
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
*DESCRIPTION
*Ultra low gate charge
*High peak current capability
*Improved transconductance
*ABSOLUT.