Infineon Technologies SPI08N80C3
Power Transistor
| Part No. | SPI08N80C3 |
|---|---|
| Datasheet | SPI08N80C3 Download |
| Manufacturer |  Infineon Technologies |
| Description | Power Transistor |
| Buy | Stock & Price |
FEATURES
● New revolutionary high voltage technology● Extreme dv/dt rated
● High peak current capability
● Qualified according to JEDEC1) for target applications
● Pb-free lead plating; RoHS compliant
● Ultra low gate charge
● Ultra low effective capacitances Product Summary V DS R DS(on)max @ Tj = 25°C Q g,typ SPI08N80C3 800 V 0.65 Ω 45 nC PG-TO262-3 CoolMOSTM 800V designed for:
● Industrial application with high DC bulk voltage
● Switching Application ( i.e. active clamp forward ) Type SPI08N80C3 Package PG-TO262-3 Marking 08N80C3 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Pulsed drain current2) I D,pulse Avalanche energy, single pulse Avalanche energy, repetitive t 2),3) AR Avalanche current, repetitive t 2),3) AR MOSFET dv /dt ruggedness E AS E AR I AR dv /dt Gate source voltage V GS T C=25 °C T C=100 °C T C=25 °C I D=1.6 A, V DD=50 V I D=8 A, V DD=50 V V DS=0…640 V static AC (f >1 Hz) Power dissipation Operating and storage temperature P tot T C=25 °C T j, T stg Value 8 5.1 24 340 0.2 8 50 ±20 ±30 104 -55 ...
