Infineon Technologies SPP06N60C3
Cool MOS Power Transistor
| Part No. | SPP06N60C3 |
|---|---|
| Datasheet | SPP06N60C3 Download |
| Manufacturer |  Infineon Technologies |
| Description | Cool MOS Power Transistor |
| Buy | Stock & Price |
FEATURES
TM Power Transistor Product Summary V DS @ T j,max R DS(on),max ID 650 0.75 6.2 V Ω A● New revolutionary high voltage technology
● Ultra low gate charge
● Periodic avalanche rated
● High peak current capability
● Ultra low effective capacitances
● Extreme dv /dt rated
● Improved transconductance PG-TO220 Type SPP06N60C3 Package PG-TO220 Ordering Code Q67040-S4629 Marking 06N60C3 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C T C=100 °C Pulsed drain current1) Avalanche energy, single pulse Avalanche energy, repetitive t AR1),2) Avalanche current, repetitive t AR1) Drain source voltage slope Gate source voltage I D,pulse E AS E AR I AR dv /dt V GS V GS Power dissipation Operating and storage temperature Reverse diode dv/dt Rev. 1.4 8) Value 6.2 3.9 18.6 200 0.5 6.2 Unit A T C=25 °C I D=3.1 A, V DD=50 V I D=6.2 A, V DD=50 V mJ A V/ns V I D=6.2 A, V DS=480 V, T j=125 °C static AC (f >1 Hz) T C=25 °C 50 ±20 ±30 74 -55 ...
