Infineon Technologies SPP11N80C3
Power Transistor
| Part No. | SPP11N80C3 |
|---|---|
| Datasheet | SPP11N80C3 Download |
| Manufacturer |  Infineon Technologies |
| Description | Power Transistor |
| Buy | Stock & Price |
MAXIMUM RATINGS
Parameter Continuous drain current TC = 25 °C TC = 100 °C Symbol SPP ID 11 7.1 ID puls EAS EAR IAR VGS VGS Ptot Tj , Tstg 33 470 0.2 11 ±20 ±30 156 Value SPA Unit A 111) 7.11) 33 470 0.2 11 ±20 ±30 41 W °C A V A mJ Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse ID=2.2A, VDD=50V Avalanche energy, repetitive tAR limited by Tjmax2) ID=11A, VDD=50V Avalanche current, repetitive tAR limited by Tjmax Gate source voltage Gate source voltage AC (f >1Hz) Power dissipation, TC = 25°C Operating and storage temperature -55...+150 Page 1 2003-07-02 Final dataMAXIMUM RATINGS
Parameter Drain Source voltage slope VDS = 640 V, ID = 11 A, Tj = 125 °C SPP11N80C3 SPA11N80C3 Symbol dv/dt Value 50 Unit V/ns Thermal Characteristics Parameter Thermal resistance, junction - case Thermal resistance, junction - case, FullPAK Thermal resistance, junction - ambient, leaded Thermal resistance, junction - ambient, FullPAK Soldering temperature, 1.6 mm (0.063 in.) from case for 10s 3)ELECTRICAL CHARACTERISTICS
, at Tj=25°C unless otherwise specified Parameter Symbol Conditions min.
