Infineon Technologies SPP80P06P
Power-Transistor
| Part No. | SPP80P06P |
|---|---|
| Datasheet | SPP80P06P Download |
| Manufacturer |  Infineon Technologies |
| Description | Power-Transistor |
| Buy | Stock & Price |
FEATURES
● Product Summary Drain source voltage Drain-source on-state resistance Continuous drain current P-Channel Enhancement mode Avalanche rated dv/dt rated 175°C operating temperature VDS RDS(on) ID -60 0.023 -80 V●
●
●
● W A Type SPP80P06P SPB80P06P Package Ordering Code Pin 1 G PIN 2/4 D PIN 3 S P-TO220-3-1 Q67042-S4017 P-TO263-3-2 Q67042-S4016
MAXIMUM RATINGS
,at T j = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current Value -80 -64 Unit A ID T C = 25 °C, 1) T C = 100 °C Pulsed drain current ID puls EAS EAR dv/dt -320 823 34 6 kV/µs mJ T C = 25 °C Avalanche energy, single pulse I D = -80 A , V DD = -25 V, RGS = 25 W Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt I S = -80 A, V DS = -48 , di/dt = 200 A/µs, T jmax = 175 °C Gate source voltage Power dissipation VGS Ptot Tj , Tstg ±20 340 -55...+175 55/175/56 V W °C T C = 25 °C Operating and storage temperature IEC climatic category; DIN IEC 68-1 1Current limited by bondwire; with an RthJC...
