Infineon Technologies SPP80P06PH
Power-Transistor
| Part No. | SPP80P06PH |
|---|---|
| Datasheet | SPP80P06PH Download |
| Manufacturer |  Infineon Technologies |
| Description | Power-Transistor |
| Buy | Stock & Price |
FEATURES
Product Summary● P-Channel
● P-Channel Drain source voltage
● Enhancement mode
● Enhancement mode Drain-source on-state resistance
● Avalanche rated
● Avalanche rated Continuous drain current
● dv/dt rated
● dv/dt rated
● 175°C operating temperature operating temperature
● 175°C
● Pb-free lead plating; RoHs compliant
● Qualified according to AEC Q101 ° Halogen-free according to IEC61249-2-21 VDS RDS(on) ID -60 0.023 -80 V W A Pin 1 Type SPP80P06P H PIN 2/4 D PIN 3 S Package Lead free G PG-TO220-3 Yes
MAXIMUM RATINGS
,at T j = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current Value -80 -64 Unit A ID T C = 25 °C, 1) T C = 100 °C Pulsed drain current ID puls EAS EAR dv/dt -320 823 34 6 kV/µs T C = 25 °C I D = -80 A , V DD = -25 V, RGS = 25 W Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt Avalanche energy, single pulse mJ I S = -80 A, V DS = -48 , di/dt = 200 A/µs, T jmax = 175 °C Gate source voltage Power dissipation VGS Ptot Tj , Tstg ±...
