• Part: iSSI30R11H
  • Manufacturer: Infineon
  • Size: 1.27 MB
Download iSSI30R11H Datasheet PDF
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iSSI30R11H Description

The Infineon SSI solid-state isolator family provides powerful energy transmission over a galvanic isolation barrier to drive the gates of MOS-controlled power transistors, such as CoolMOS™, OptiMOS™, or TRENCHSTOP™ IGBT. The output side of the Infineon SSI solid-state isolator family does not require a dedicated voltage supply to drive the power transistor's gate. The output side offers advanced control functions...

iSSI30R11H Key Features

  • Solid-state isolators using Infineon's coreless-transformer technology
  • No isolated gate bias supply required for gate driving
  • Perfect match for CoolMOS™, OptiMOS™, and TRENCHSTOP™ IGBT
  • Low power, large input voltage range from 2.6 V to 3.5 V (internally clamped)
  • High-impedance, CMOS input (buffered variants)
  • High output voltage up to 18 V
  • no series or parallel configuration required for powerful gate
  • High output peak current of 175 µA (direct drive variants) or 400 mA (buffered variants)
  • Fast turn-off for safe switches' SOA operation
  • Temperature sensor and current sensor protection inputs